Nanoscale Res Lett 2014, 9:12.CrossRef 14. Yoon J, Choi H, Lee D, Park JB, Lee J, Seong DJ, Ju Y, Chang M, Jung S, Hwang H: Excellent switching uniformity of Cu-doped MoO x /GdO x bilayer for nonvolatile Caspase Inhibitor VI research buy memory application.
IEEE Electron Device Lett 2009, 30:457.CrossRef 15. Wei Z, Takagi T, Kanzawa Y, Katoh Y, Ninomiya T, Kawai K, Muraoka S, Mitani S, Katayama K, Fujii S, Miyanaga R, Kawashima Y, Mikawa T, Shimakawa K, Aono K: Demonstration of high-density ReRAM ensuring 10-year retention at 85°C based on a newly developed reliability model. Tech Dig – Int Electron Devices Meet 2011, 31.4.1–31.4.4. 16. Yang JJ, Zhang MX, Strachan JP, Miao F, Pickett MD, Kelley RD, Medeiros-Ribeiro G, Williams GSK1210151A RS: High switching endurance in TaO x memristive devices. Appl Phys Lett 2010, 97:232102.CrossRef 17. Zhuo VYQ, Jiang Y, Li MH, Chua EK, Zhang Z, Pan JS, Zhao R, Shi
LP, Chong TC, Robertson J: Band alignment between Ta 2 O 5 and metals for resistive random access memory electrodes engineering. Appl Phys Lett 2013, 102:062106–5.CrossRef 18. Ninomiya T, Wei Z, Muraoka S, Yasuhara R, Katayama K, Takagi T: Conductive filament scaling of TaO x bipolar ReRAM for improving data retention under low operation current. IEEE Trans Electron Devices 2013, 60:1384.CrossRef 19. Birks N, Meier GH, Pettit FS: Introduction to the High-Temperature Oxidation of Metal. Cambridge: Cambridge University Press; 2006.CrossRef 20. Panda D, Huang CY, Tseng TY: Resistive switching characteristics of nickel silicide layer embedded HfO 2 film. Appl Phys Lett 2012, 100:112901.CrossRef 21. Prakash A, Maikap S, Banerjee W, Jana D, Lai CS: Impact of electrically formed interfacial layer and improved memory characteristics Phenylethanolamine N-methyltransferase of IrO x /high-κ x /W structures containing AlO x , GdO x , HfO x , and TaO x switching materials. Nanoscale Res Lett 2013, 8:379.CrossRef Competing interests
The authors declare that they have no competing interests. Authors’ contributions DJ and AP fabricated the RRAM devices under the instruction of SM. MD Dabrafenib manufacturer measured the devices under the instruction of SM. SM also measured the devices. AP helped in understanding the switching characteristics. All the authors contributed to the revision of the manuscript, and they approved it for publication.”
“Background Epigallocatechin-3-gallate (EGCG) is the major and most active constituent in green tea [1]. A number of studies reported that EGCG had significant bioactivities such as anticancer [2, 3], prevention of cardiovascular disease [4], and regulation of endocrine [5] and immune system [6]. EGCG has great potential in cancer prevention because of its safety, low cost, and bioavailability [7, 8]. Some research results verified that encapsulated EGCG retained its bioactivity such as inducing apoptosis of Du145 prostate cancer cells.